Technical parameters/drain source resistance: 12.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.83 W
Technical parameters/leakage source breakdown voltage: 40.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 10.4 A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
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