Technical parameters/rated power: 36 W
Technical parameters/drain source resistance: 9 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 4.2 W
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 47.0 A
Technical parameters/rise time: 150 ns
Technical parameters/Input capacitance (Ciss): 2000pF @20V(Vds)
Technical parameters/rated power (Max): 36 W
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 4200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7848BDP-T1-GE3
|
Vishay Semiconductor | 完全替代 | PowerPAK SO |
Single N-Channel 40V 0.009Ω SMT TrenchFET Power Mosfet - PowerPAK SO-8
|
||
SI7848BDP-T1-GE3
|
VISHAY | 完全替代 | SOIC-8 |
Single N-Channel 40V 0.009Ω SMT TrenchFET Power Mosfet - PowerPAK SO-8
|
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