Technical parameters/drain source resistance: 0.36 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.5 W
Technical parameters/threshold voltage: 3.6 V
Technical parameters/drain source voltage (Vds): 250 V
Technical parameters/Continuous drain current (Ids): 19.5 A
Technical parameters/operating temperature (Max): 150 ℃
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: 1212
External dimensions/packaging: 1212
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7802DN-T1-GE3
|
Vishay Siliconix | 完全替代 | 1212-8 |
MOSFET N-CH 250V 1.24A 1212-8
|
||
SI7802DN-T1-GE3
|
Vishay Semiconductor | 完全替代 | 1212 |
MOSFET N-CH 250V 1.24A 1212-8
|
||
SI7802DN-T1-GE3
|
Vishay Intertechnology | 完全替代 | 1212-8 |
MOSFET N-CH 250V 1.24A 1212-8
|
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