Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.017 Ω
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 1.4 W
Technical parameters/threshold voltage: 1.5 V
Technical parameters/drain source voltage (Vds): 12 V
Technical parameters/leakage source breakdown voltage: 12.0 V
Technical parameters/breakdown voltage of gate source: ±8.00 V
Technical parameters/Continuous drain current (Ids): 11.8 A
Technical parameters/rated power (Max): 1.4 W
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7540DP-T1-E3
|
Vishay Siliconix | 完全替代 | SO-8 |
MOSFET N/P-CH 12V 7.6A PPAK SO-8
|
||
SI7540DP-T1-E3
|
VISHAY | 完全替代 | SO-8 |
MOSFET N/P-CH 12V 7.6A PPAK SO-8
|
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