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Model SI7501DN-T1-GE3
Description VISHAY SI7501DN-T1-GE3 Dual field-effect transistor, MOSFET, N and P channels, 5.4 A, 30 V, 0.028 ohm, 10 V, 3 V
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Brand: Vishay Semiconductor
Packaging 1212
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Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8558) Minimum order quantity(1)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.028 Ω

Technical parameters/polarity: N-Channel, P-Channel

Technical parameters/dissipated power: 1.6 W

Technical parameters/threshold voltage: 3 V

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/operating temperature (Max): 150 ℃

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: 1212

External dimensions/packaging: 1212

Compliant with standards/RoHS standards: Exempt

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI7501DN-T1-E3 SI7501DN-T1-E3 VISHAY 完全替代 1212
MOSFET N/P-CH 30V 5.4A 1212-8
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