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Model SI6926ADQ-T1-GE3
Description VISHAY SI6926ADQ-T1-GE3 Dual Field Effect Transistor, MOSFET, Dual N-channel, 4.1 A, 20 V, 0.024 ohm, 4.5 V, 1 V
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Brand: Vishay Semiconductor
Packaging TSSOP
Delivery time
Packaging method
Standard packaging quantity 1
2.11  yuan 2.11yuan
5+:
$ 2.8445
25+:
$ 2.6338
50+:
$ 2.4863
100+:
$ 2.4231
500+:
$ 2.3809
2500+:
$ 2.3282
5000+:
$ 2.3072
10000+:
$ 2.2756
Quantity
5+
25+
50+
100+
500+
Price
$2.8445
$2.6338
$2.4863
$2.4231
$2.3809
Price $ 2.8445 $ 2.6338 $ 2.4863 $ 2.4231 $ 2.3809
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8834) Minimum order quantity(5)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.024 Ω

Technical parameters/polarity: Dual N-Channel

Technical parameters/dissipated power: 830 mW

Technical parameters/threshold voltage: 400 mV

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/Continuous drain current (Ids): 4.50 A

Technical parameters/rise time: 16 ns

Technical parameters/descent time: 9 ns

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: TSSOP

External dimensions/packaging: TSSOP

Physical parameters/operating temperature: -55℃ ~ 150℃

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

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