Technical parameters/dissipated power: 1.9W (Ta)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/dissipated power (Max): 1.9W (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7483ADP-T1-GE3
|
VISHAY | 完全替代 | PowerPAK |
MOSFET P-CH 30V 14A PPAK SO-8
|
||
SI7483ADP-T1-GE3
|
Vishay Semiconductor | 完全替代 |
MOSFET P-CH 30V 14A PPAK SO-8
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review