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Description MOSFET N-CH 100V 5.7A PPAK 8SOIC
Product QR code
Packaging SO-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
53.45  yuan 53.45yuan
1+:
$ 61.4675
10+:
$ 58.7950
100+:
$ 58.3140
250+:
$ 57.9398
500+:
$ 57.3519
1000+:
$ 57.0846
2500+:
$ 56.7105
5000+:
$ 56.3898
Quantity
1+
10+
100+
250+
500+
Price
$61.4675
$58.7950
$58.3140
$57.9398
$57.3519
Price $ 61.4675 $ 58.7950 $ 58.3140 $ 57.9398 $ 57.3519
Start batch production 1+ 10+ 100+ 250+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(4453) Minimum order quantity(1)
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Technical parameters/drain source resistance: 0.028 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.9 W

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/leakage source breakdown voltage: 100 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 9.30 A, 5.70 A

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1.9W (Ta)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO-8

External dimensions/length: 5.99 mm

External dimensions/packaging: SO-8

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI7456DP-T1-GE3 SI7456DP-T1-GE3 Vishay Intertechnology 类似代替 SO-8
MOSFET N-CH 100V 5.7A PPAK SO-8

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