Technical parameters/drain source resistance: 0.028 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.9 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 9.30 A, 5.70 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.9W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 5.99 mm
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7456DP-T1-GE3
|
Vishay Intertechnology | 类似代替 | SO-8 |
MOSFET N-CH 100V 5.7A PPAK SO-8
|
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