Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.5W (Ta)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): -11.0 A
Technical parameters/dissipated power (Max): 1.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: 1212-8
External dimensions/packaging: 1212-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7129DN-T1-GE3
|
Vishay Semiconductor | 功能相似 | PowerPAK-1212-8 |
SI7129DN-T1-GE3 P-channel MOSFET Transistor, 11.5A, 30V, 8Pin PowerPAK 1212
|
||
SI7129DN-T1-GE3
|
VISHAY | 功能相似 | PowerPAK-1212-8 |
SI7129DN-T1-GE3 P-channel MOSFET Transistor, 11.5A, 30V, 8Pin PowerPAK 1212
|
||
SI7409ADN-T1-E3
|
Vishay Siliconix | 类似代替 | PowerPAK-1212-8 |
MOSFET P-CH 30V 7A 1212-8
|
||
SI7409ADN-T1-E3
|
Vishay Semiconductor | 类似代替 |
MOSFET P-CH 30V 7A 1212-8
|
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