Technical parameters/drain source resistance: 80.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.14 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): -2.90 A to 2.90 A
Technical parameters/rise time: 9 ns
Technical parameters/rated power (Max): 830 mW
Technical parameters/descent time: 9 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: TSSOP-8
External dimensions/packaging: TSSOP-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI6955ADQ-T1
|
Vishay Siliconix | 功能相似 | TSSOP |
MOSFET 30V 2.9A
|
||
SI6955ADQ-T1-GE3
|
Vishay Siliconix | 完全替代 | TSSOP-8 |
MOSFET P-CH D-S 30V 8-TSSOP
|
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