Technical parameters/polarity: P-Channel
Technical parameters/drain source voltage (Vds): -60.0 V
Technical parameters/Continuous drain current (Ids): -2.70 A
Technical parameters/rise time: 15 ns
Technical parameters/descent time: 35 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: TSSOP
External dimensions/packaging: TSSOP
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI6459BDQ-T1-E3
|
Vishay Intertechnology | 完全替代 | TSSOP-8 |
MOSFET P-CH 60V 2.2A 8-TSSOP
|
||
SI6459BDQ-T1-E3
|
VISHAY | 完全替代 | TSSOP-8 |
MOSFET P-CH 60V 2.2A 8-TSSOP
|
||
SI6459BDQ-T1-E3
|
Vishay Semiconductor | 完全替代 |
MOSFET P-CH 60V 2.2A 8-TSSOP
|
|||
SI6459BDQ-T1-E3
|
Vishay Siliconix | 完全替代 | TSSOP-8 |
MOSFET P-CH 60V 2.2A 8-TSSOP
|
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