Technical parameters/drain source resistance: 0.155 Ω
Technical parameters/polarity: Dual P-Channel
Technical parameters/dissipated power: 1.1 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/Continuous drain current (Ids): -2.90 A
Technical parameters/thermal resistance: 90℃/W (RθJA)
Technical parameters/rated power (Max): 1.1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SMD-8
External dimensions/length: 3.1 mm
External dimensions/width: 1.65 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: SMD-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTHD4401PT1G
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ON Semiconductor | 功能相似 | SMD-8 |
功率MOSFET -20 V， -3.0 A，双P沟道， ChipFET Power MOSFET −20 V, −3.0 A, Dual P−Channel, ChipFET
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ZXMD63P02XTA
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ZXMD63N02X 系列 20 V 0.27 Ohm 双 P 沟道 增强模式 MOSFET -MSOP-8
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Zetex | 功能相似 | MSOP-8 |
ZXMD63N02X 系列 20 V 0.27 Ohm 双 P 沟道 增强模式 MOSFET -MSOP-8
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ZXMD63P02XTA
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Diodes Zetex | 功能相似 | TSSOP-8 |
ZXMD63N02X 系列 20 V 0.27 Ohm 双 P 沟道 增强模式 MOSFET -MSOP-8
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