Technical parameters/drain source resistance: 0.065 Ω
Technical parameters/polarity: Dual N-Channel
Technical parameters/dissipated power: 2.1 W
Technical parameters/threshold voltage: 1.5 V
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20.0 V
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/Continuous drain current (Ids): 4.20 A
Technical parameters/rated power (Max): 1.1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SMD-8
External dimensions/packaging: SMD-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/06/16
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5904DC-T1-GE3
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 20V 1206-8
|
|||
SI5904DC-T1-GE3
|
Vishay Siliconix | 完全替代 | SMD-8 |
MOSFET N-CH 20V 1206-8
|
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