Technical parameters/polarity: N-Channel, Dual N-Channel
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 6.00 A
Technical parameters/Input capacitance (Ciss): 300pF @15V(Vds)
Technical parameters/rated power (Max): 10.4 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPAK-ChipFET-8
External dimensions/length: 3 mm
External dimensions/width: 1.8 mm
External dimensions/height: 0.75 mm
External dimensions/packaging: PowerPAK-ChipFET-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
906D
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Vishay Siliconix | 功能相似 |
Power Field-Effect Transistor, 6A I(D), 30V, 0.031ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, CHIPFET-8
|
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