Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Input capacitance (Ciss): 455pF @10V(Vds)
Technical parameters/rated power (Max): 4.5 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SMD-8
External dimensions/length: 3.05 mm
External dimensions/width: 1.65 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: SMD-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI5509DC-T1-E3
|
Vishay Intertechnology | 完全替代 | 1206 |
MOSFET N/P-CH 20V 6.1A 1206-8
|
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