Technical parameters/dissipated power: 1.6W (Ta)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/dissipated power (Max): 1.6W (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4864DY
|
Vishay Semiconductor | 功能相似 | SO |
MOSFET 20V 25A 3.5W
|
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SI4864DY
|
Visay | 功能相似 |
MOSFET 20V 25A 3.5W
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SI4864DY
|
Vishay Siliconix | 功能相似 | SO |
MOSFET 20V 25A 3.5W
|
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SI4864DY-T1
|
Vishay Semiconductor | 功能相似 |
Small Signal Field-Effect Transistor, 17A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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