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Model SI4833BDY-T1-GE3
Description -30V,-4.6A,PChannel MOSFET
Product QR code
Brand: VISHAY
Packaging SOP
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.65  yuan 2.65yuan
5+:
$ 3.5802
25+:
$ 3.3150
50+:
$ 3.1294
100+:
$ 3.0498
500+:
$ 2.9968
2500+:
$ 2.9305
5000+:
$ 2.9039
10000+:
$ 2.8642
Quantity
5+
25+
50+
100+
500+
Price
$3.5802
$3.3150
$3.1294
$3.0498
$2.9968
Price $ 3.5802 $ 3.3150 $ 3.1294 $ 3.0498 $ 2.9968
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5238) Minimum order quantity(5)
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Technical parameters/polarity: P-CH

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 3.8A

Technical parameters/rise time: 73 ns

Technical parameters/Input capacitance (Ciss): 350pF @15V(Vds)

Technical parameters/descent time: 8 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1750 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOP

External dimensions/packaging: SOP

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4833BDY-T1-GE3 SI4833BDY-T1-GE3 Vishay Siliconix 功能相似 SO-8
Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET
PDF
SI4833BDY-T1-GE3 SI4833BDY-T1-GE3 VISHAY 功能相似 SOP
Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET
PDF

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