Technical parameters/drain source resistance: 9 mΩ
Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 16.5A
Technical parameters/descent time: 8 ns
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Minimum Packaging: 2500
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4884BDY-T1-E3
|
VISHAY | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 30V 12.4A 8Pin SOIC N T/R
|
||
SI4884BDY-T1-E3
|
Vishay Semiconductor | 功能相似 | SO-8 |
Trans MOSFET N-CH 30V 12.4A 8Pin SOIC N T/R
|
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