Technical parameters/rated power: 2.6 W
Technical parameters/drain source resistance: 0.033 Ω
Technical parameters/polarity: Dual N-Channel
Technical parameters/dissipated power: 3.7 W
Technical parameters/threshold voltage: 2.4 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 5.30 A
Technical parameters/Input capacitance (Ciss): 840pF @30V(Vds)
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.7 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.55 mm
External dimensions/packaging: SOIC
Physical parameters/operating temperature: -50℃ ~ 175℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4946BEY-T1-E3
|
Vishay Semiconductor | 完全替代 | SOIC-8 |
Trans MOSFET N-CH 60V 5.3A 8Pin SOIC N T/R
|
||
SI4946BEY-T1-E3
|
VISHAY | 完全替代 | SOIC-8 |
Trans MOSFET N-CH 60V 5.3A 8Pin SOIC N T/R
|
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