Technical parameters/dissipated power: 2.5W (Ta), 4.45W (Tc)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 1525pF @15V(Vds)
Technical parameters/dissipated power (Max): 2.5W (Ta), 4.45W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4884BDY-T1-E3
|
VISHAY | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 30V 12.4A 8Pin SOIC N T/R
|
||
SI4884BDY-T1-E3
|
Vishay Semiconductor | 功能相似 | SO-8 |
Trans MOSFET N-CH 30V 12.4A 8Pin SOIC N T/R
|
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