Technical parameters/drain source resistance: 0.0028 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.6 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20.0 V
Technical parameters/breakdown voltage of gate source: ±8.00 V
Technical parameters/Continuous drain current (Ids): 25.0 A
Technical parameters/operating temperature (Max): 150 ℃
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4864DY
|
Vishay Semiconductor | 功能相似 | SO |
MOSFET 20V 25A 3.5W
|
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SI4864DY
|
Visay | 功能相似 |
MOSFET 20V 25A 3.5W
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SI4864DY
|
Vishay Siliconix | 功能相似 | SO |
MOSFET 20V 25A 3.5W
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SI4864DY-T1
|
Vishay Semiconductor | 功能相似 |
Small Signal Field-Effect Transistor, 17A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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