Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0135 Ω
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 4.5 W
Technical parameters/threshold voltage: 800 mV
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.1 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.55 mm
External dimensions/packaging: SOIC
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Intertechnology | 功能相似 |
Trans MOSFET N/P-CH 30V/8V 9A/6.4A 8Pin SOIC N T/R
|
|||
SI4501BDY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
Trans MOSFET N/P-CH 30V/8V 9A/6.4A 8Pin SOIC N T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review