Technical parameters/polarity: N+P
Technical parameters/drain source voltage (Vds): 30V, 8V
Technical parameters/Continuous drain current (Ids): 6A/3.8A
Technical parameters/rated power (Max): 1.2 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4505DY-T1
|
Vishay Semiconductor | 功能相似 | SOP-8 |
Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
|
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