Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0075 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.5 W
Technical parameters/drain source voltage (Vds): -30.0 V
Technical parameters/Continuous drain current (Ids): -15.0 A
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SOIC-8
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSO080P03SHXUMA1
|
Infineon | 功能相似 | SOIC-8 |
INFINEON BSO080P03SHXUMA1 晶体管, MOSFET, P沟道, -12.6 A, -30 V, 0.0067 ohm, -10 V, -1.5 V
|
||
SI4413ADY-T1-E3
|
Vishay Siliconix | 功能相似 | SOIC-8 |
VISHAY SI4413ADY-T1-E3 晶体管, MOSFET, P沟道, -10.5 A, -30 V, 0.0063 ohm, -10 V, -1 V
|
||
SI4413ADY-T1-E3
|
Vishay Intertechnology | 功能相似 | SOIC-8 |
VISHAY SI4413ADY-T1-E3 晶体管, MOSFET, P沟道, -10.5 A, -30 V, 0.0063 ohm, -10 V, -1 V
|
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