Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5W (Ta), 5.7W (Tc)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 2060pF @15V(Vds)
Technical parameters/dissipated power (Max): 2.5W (Ta), 5.7W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF8714TRPBF
|
International Rectifier | 功能相似 | SOIC-8 |
N沟道 30 V 2.5 W 8.1 nC 功率Mosfet 表面贴装 - SOIC-8
|
||
IRF8714TRPBF
|
Infineon | 功能相似 | SOIC-8 |
N沟道 30 V 2.5 W 8.1 nC 功率Mosfet 表面贴装 - SOIC-8
|
||
SI4174DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
SI4174DY-T1-GE3 编带
|
||
SI4174DY-T1-GE3
|
VISHAY | 类似代替 | SOIC-8 |
SI4174DY-T1-GE3 编带
|
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