Technical parameters/dissipated power: 2W (Ta), 3.5W (Tc)
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Input capacitance (Ciss): 640pF @20V(Vds)
Technical parameters/dissipated power (Max): 2W (Ta), 3.5W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3438DV-T1-E3
|
Vishay Semiconductor | 完全替代 |
Trans MOSFET N-CH 40V 5.5A 6Pin TSOP T/R
|
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