Technical parameters/dissipated power: 1.3W (Ta)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/dissipated power (Max): 1.3W (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4412ADY-T1
|
VISHAY | 功能相似 | SOIC |
MOSFET 30V 8A 2.5W
|
||
SI4412ADY-T1-GE3
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 30V 5.8A 8-SOIC
|
|||
SI4412ADY-T1-GE3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
MOSFET N-CH 30V 5.8A 8-SOIC
|
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