Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.6W (Ta)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 25.0 A
Technical parameters/Input capacitance (Ciss): 8500pF @10V(Vds)
Technical parameters/rated power (Max): 1.6 W
Technical parameters/dissipated power (Max): 1.6W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4378DY-T1-E3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
MOSFET N-CH 20V 19A 8-SOIC
|
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