Technical parameters/drain source resistance: 27 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 3.5 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 19A
Technical parameters/rise time: 65 ns
Technical parameters/Input capacitance (Ciss): 8500pF @10V(Vds)
Technical parameters/descent time: 50 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4378DY-T1-E3
|
Vishay Siliconix | 完全替代 | SOIC-8 |
MOSFET N-CH 20V 19A 8-SOIC
|
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