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Model SI4396DY-T1-E3
Description MOSFET N-CH 30V 16A 8-SOIC
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Brand: VISHAY
Packaging SO-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5091) Minimum order quantity(1)
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Technical parameters/drain source resistance: 16 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 3.1 W

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 16.0 A

Technical parameters/Input capacitance (Ciss): 1675pF @15V(Vds)

Technical parameters/rated power (Max): 5.4 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 3.1W (Ta), 5.4W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SO-8

External dimensions/packaging: SO-8

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4396DY-T1-GE3 SI4396DY-T1-GE3 Vishay Semiconductor 完全替代
MOSFET N-CH 30V 16A 8-SOIC
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