Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0073 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3 W
Technical parameters/threshold voltage: 1.5 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 18.4A
Technical parameters/rise time: 11 ns
Technical parameters/Input capacitance (Ciss): 1970pF @50V(Vds)
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 6 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Other/Manufacturing Applications: Communication and networking, industry, power management
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4190DY-T1-GE3
|
Vishay Semiconductor | 类似代替 | 8 |
MOSFET N-CH 100V 20A 8-SOIC
|
||
SI4190DY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
MOSFET N-CH 100V 20A 8-SOIC
|
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