Technical parameters/drain source resistance: 125 mΩ
Technical parameters/polarity: Dual P-Channel, P-Channel
Technical parameters/dissipated power: 1.15 W
Technical parameters/drain source voltage (Vds): -8.00 V
Technical parameters/breakdown voltage of gate source: ±8.00 V
Technical parameters/Continuous drain current (Ids): 2.50 A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOP
External dimensions/packaging: TSOP
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
|---|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review