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Model SI4190ADY-T1-GE3
Description MOSFET N-CH 100V 18.4A 8SO
Product QR code
Brand: Vishay Siliconix
Packaging SOIC-8
Delivery time
Packaging method
Standard packaging quantity 1
7.19  yuan 7.19yuan
10+:
$ 8.6244
100+:
$ 8.1932
500+:
$ 7.9057
1000+:
$ 7.8913
2000+:
$ 7.8338
5000+:
$ 7.7620
7500+:
$ 7.7045
10000+:
$ 7.6757
Quantity
10+
100+
500+
1000+
2000+
Price
$8.6244
$8.1932
$7.9057
$7.8913
$7.8338
Price $ 8.6244 $ 8.1932 $ 7.9057 $ 7.8913 $ 7.8338
Start batch production 10+ 100+ 500+ 1000+ 2000+
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  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9000) Minimum order quantity(10)
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Technical parameters/drain source resistance: 0.0073 Ω

Technical parameters/dissipated power: 6 W

Technical parameters/threshold voltage: 1.5 V

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/rise time: 11 ns

Technical parameters/Input capacitance (Ciss): 1970pF @50V(Vds)

Technical parameters/descent time: 10 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 3W (Ta), 6W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/length: 4.9 mm

External dimensions/width: 3.9 mm

External dimensions/height: 1.75 mm

External dimensions/packaging: SOIC-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standard/REACH SVHC version: 2014/06/16

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4190DY-T1-GE3 SI4190DY-T1-GE3 Vishay Semiconductor 类似代替 8
MOSFET N-CH 100V 20A 8-SOIC
PDF
SI4190DY-T1-GE3 SI4190DY-T1-GE3 Vishay Siliconix 类似代替 SOIC-8
MOSFET N-CH 100V 20A 8-SOIC
PDF

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