Technical parameters/drain source resistance: 0.02 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.6 W
Technical parameters/threshold voltage: 450 mV
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 1065pF @10V(Vds)
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.6 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOP-6
External dimensions/length: 3.1 mm
External dimensions/width: 1.7 mm
External dimensions/height: 1 mm
External dimensions/packaging: TSOP-6
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SQ3460EV-T1_GE3
|
Vishay Semiconductor | 功能相似 | TSOP-6 |
MOSFET N-CH 20V 8A 6TSOP
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review