Technical parameters/drain source resistance: 0.062 Ω
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 1.15 W
Technical parameters/threshold voltage: 600 mV
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/Continuous drain current (Ids): 2.50 A
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOP-6
External dimensions/packaging: TSOP-6
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3590DV-T1-GE3
|
Vishay Semiconductor | 完全替代 | TSOP |
Trans MOSFET N/P-CH 30V 2.5A/1.7A 6Pin TSOP T/R
|
||
SI3590DV-T1-GE3
|
VISHAY | 完全替代 | TSOP-6 |
Trans MOSFET N/P-CH 30V 2.5A/1.7A 6Pin TSOP T/R
|
||
SI3590DV-T1-GE3
|
Vishay Siliconix | 完全替代 | TSOT-23-6 |
Trans MOSFET N/P-CH 30V 2.5A/1.7A 6Pin TSOP T/R
|
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