Technical parameters/number of channels: 1
Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 0.034 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/product series: SI3443DV
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20 V
Technical parameters/Continuous drain current (Ids): -4.40 A
Technical parameters/rise time: 33 ns
Technical parameters/Input capacitance (Ciss): 1079pF @10V(Vds)
Technical parameters/rated power (Max): 2 W
Technical parameters/descent time: 72 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 2W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/length: 3 mm
External dimensions/width: 1.5 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTGS3443T1G
|
ON Semiconductor | 功能相似 | SOT-23-6 |
ON SEMICONDUCTOR NTGS3443T1G 晶体管, MOSFET, P沟道, 3.1 A, -20 V, 0.058 ohm, -4.5 V, -950 mV
|
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