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Model SI4090DY-T1-GE3
Description N Channel MOSFET, medium voltage/ThunderFET ®， Vishay Semiconductor
Product QR code
Brand: Vishay Semiconductor
Packaging SOIC
Delivery time
Packaging method
Standard packaging quantity 1
3.73  yuan 3.73yuan
5+:
$ 5.0328
25+:
$ 4.6600
50+:
$ 4.3990
100+:
$ 4.2872
500+:
$ 4.2126
2500+:
$ 4.1194
5000+:
$ 4.0822
10000+:
$ 4.0262
Quantity
5+
25+
50+
100+
500+
Price
$5.0328
$4.6600
$4.3990
$4.2872
$4.2126
Price $ 5.0328 $ 4.6600 $ 4.3990 $ 4.2872 $ 4.2126
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9281) Minimum order quantity(5)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.008 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 7.8 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/Input capacitance (Ciss): 2410pF @50V(Vds)

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 7.8 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/length: 5 mm

External dimensions/width: 4 mm

External dimensions/height: 1.5 mm

External dimensions/packaging: SOIC

Physical parameters/operating temperature: -55℃ ~ 150℃

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

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