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Model SI3867DV-T1-GE3
Description VISHAY SI3867DV-T1-GE3 Transistor, P-channel
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Brand: Vishay Semiconductor
Packaging TSOP
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Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2460) Minimum order quantity(1)
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Technical parameters/number of pins: 6

Technical parameters/drain source resistance: 51 mΩ

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 1.1 W

Technical parameters/drain source voltage (Vds): -20.0 V

Technical parameters/Continuous drain current (Ids): -5.10 A

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TSOP

External dimensions/packaging: TSOP

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI3867DV-T1-E3 SI3867DV-T1-E3 Vishay Intertechnology 完全替代 TSOP-6
MOSFET P-CH 20V 3.9A 6-TSOP
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