Technical parameters/drain source resistance: 200 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 830mW (Ta)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: -30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 1.80 A
Technical parameters/dissipated power (Max): 830mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
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