Technical parameters/drain source resistance: 8.50 mΩ
Technical parameters/polarity: N-Channel, Dual N-Channel
Technical parameters/dissipated power: 1.15 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 2.50 A
Technical parameters/rise time: 9 ns
Technical parameters/rated power (Max): 1.15 W
Technical parameters/descent time: 5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOP
External dimensions/packaging: TSOP
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
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