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Model SI3861BDV-T1-E3
Description VISHAY SI3861BDV-T1-E3 Field effect transistor, MOSFET, N+P channel, 20V, TSOP
Product QR code
Brand: Vishay Semiconductor
Packaging TSOT-23-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4214) Minimum order quantity(1)
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Technical parameters/number of output interfaces: 1

Technical parameters/number of pins: 6

Technical parameters/drain source resistance: 145 mΩ

Technical parameters/dissipated power: 830 mW

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/output current (Max): 2.3 A

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 830 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: TSOT-23-6

External dimensions/height: 1 mm

External dimensions/packaging: TSOT-23-6

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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SI3861BDV-T1-E3 SI3861BDV-T1-E3 Vishay Semiconductor 完全替代 TSOT-23-6
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