Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rated power (Max): 830 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3590DV-T1-GE3
|
Vishay Semiconductor | 完全替代 | TSOP |
Trans MOSFET N/P-CH 30V 2.5A/1.7A 6Pin TSOP T/R
|
||
SI3590DV-T1-GE3
|
VISHAY | 完全替代 | TSOP-6 |
Trans MOSFET N/P-CH 30V 2.5A/1.7A 6Pin TSOP T/R
|
||
SI3590DV-T1-GE3
|
Vishay Siliconix | 完全替代 | TSOT-23-6 |
Trans MOSFET N/P-CH 30V 2.5A/1.7A 6Pin TSOP T/R
|
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