Technical parameters/drain source resistance: 0.04 Ω
Technical parameters/dissipated power: 3.5 W
Technical parameters/input capacitance: 860pF @10V
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Input capacitance (Ciss): 860pF @10V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2W (Ta), 3.5W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/length: 3.1 mm
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI3460BDV-T1-GE3
|
VISHAY | 类似代替 | TSOP-6 |
Trans MOSFET N-CH 20V 6.7A 6Pin TSOP T/R
|
||
SI3460BDV-T1-GE3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
Trans MOSFET N-CH 20V 6.7A 6Pin TSOP T/R
|
||
SI3460BDV-T1-GE3
|
Vishay Semiconductor | 类似代替 | TSOP-6 |
Trans MOSFET N-CH 20V 6.7A 6Pin TSOP T/R
|
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