Technical parameters/drain source resistance: 0.1 Ω
Technical parameters/dissipated power: 1.1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.1W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/length: 3.1 mm
External dimensions/height: 1 mm
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PMN50XP,165
|
NXP | 功能相似 | TSOP-457 |
NXP PMN50XP,165 晶体管, MOSFET, P沟道, -2.8 A, -20 V, 0.048 ohm, -4.5 V, -750 mV
|
||
PMN50XP,165
|
Nexperia | 功能相似 | TSOP-457 |
NXP PMN50XP,165 晶体管, MOSFET, P沟道, -2.8 A, -20 V, 0.048 ohm, -4.5 V, -750 mV
|
||
SI3443BDV-T1-GE3
|
Vishay Semiconductor | 类似代替 |
Mosfet p-Ch 20V 3.6A 6-Tsop
|
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