Technical parameters/polarity: P-CH
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 4A
Technical parameters/Input capacitance (Ciss): 640pF @10V(Vds)
Technical parameters/rated power (Max): 800 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
International Rectifier | 类似代替 | Surface Mount |
FAIRCHILD SEMICONDUCTOR SI3443DV 晶体管, MOSFET, P沟道, -4 A, -20 V, 0.054 ohm, -4.5 V, -700 mV
|
||
SI3443DV
|
ON Semiconductor | 类似代替 | TSOT-23-6 |
FAIRCHILD SEMICONDUCTOR SI3443DV 晶体管, MOSFET, P沟道, -4 A, -20 V, 0.054 ohm, -4.5 V, -700 mV
|
||
SI3443DV
|
Fairchild | 类似代替 | TSOT-23-6 |
FAIRCHILD SEMICONDUCTOR SI3443DV 晶体管, MOSFET, P沟道, -4 A, -20 V, 0.054 ohm, -4.5 V, -700 mV
|
||
|
|
VISHAY | 类似代替 | TSOP |
FAIRCHILD SEMICONDUCTOR SI3443DV 晶体管, MOSFET, P沟道, -4 A, -20 V, 0.054 ohm, -4.5 V, -700 mV
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review