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Model SI2311DS-T1-E3
Description PChannel 1.8-V (G-S) MOSFET P-Channel 1.8-V (G-S) MOSFET
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Brand: Vishay Semiconductor
Packaging SOT-23
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Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8509) Minimum order quantity(1)
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Technical parameters/drain source resistance: 45.0 mΩ

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 960 mW

Technical parameters/drain source voltage (Vds): -8.00 V

Technical parameters/Continuous drain current (Ids): -3.00 A

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: SOT-23

External dimensions/packaging: SOT-23

Other/Product Lifecycle: Unknown

Compliant with standards/RoHS standards: RoHS Compliant

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