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Model SI2307BDS-T1-E3
Description MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.063Ω; ID -2.5A; TO-236 (SOT-23); PD 0.75W
Product QR code
Brand: Vishay Siliconix
Packaging SOT-23-3
Delivery time
Packaging method
Standard packaging quantity 1
7.11  yuan 7.11yuan
10+:
$ 8.5368
100+:
$ 8.1100
500+:
$ 7.8254
1000+:
$ 7.8112
2000+:
$ 7.7543
5000+:
$ 7.6831
7500+:
$ 7.6262
10000+:
$ 7.5978
Quantity
10+
100+
500+
1000+
2000+
Price
$8.5368
$8.1100
$7.8254
$7.8112
$7.7543
Price $ 8.5368 $ 8.1100 $ 7.8254 $ 7.8112 $ 7.7543
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1793) Minimum order quantity(10)
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Technical parameters/drain source resistance: 0.105 Ω

Technical parameters/dissipated power: 0.75 W

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Input capacitance (Ciss): 380pF @15V(Vds)

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 750mW (Ta)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: SOT-23-3

External dimensions/length: 3.04 mm

External dimensions/packaging: SOT-23-3

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI2307BDS-T1-GE3 SI2307BDS-T1-GE3 Vishay Intertechnology 类似代替 SOT-23-3
Trans MOSFET P-CH 30V 2.5A 3Pin TO-236 T/R
PDF
SI2307BDS-T1-GE3 SI2307BDS-T1-GE3 Vishay Semiconductor 类似代替 SOT-23-3
Trans MOSFET P-CH 30V 2.5A 3Pin TO-236 T/R
PDF

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