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Model SI1072X-T1-GE3
Description MOSFET N-CH 30V SC89
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Brand: Vishay Siliconix
Packaging SC-89-6
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Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5749) Minimum order quantity(1)
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Technical parameters/dissipated power: 236mW (Ta)

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Input capacitance (Ciss): 280pF @15V(Vds)

Technical parameters/dissipated power (Max): 236mW (Ta)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SC-89-6

External dimensions/packaging: SC-89-6

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI1070X-T1-E3 SI1070X-T1-E3 Vishay Siliconix 类似代替 SC-89-6
MOSFET N-CH 30V 1.2A SOT563F
PDF
SI1070X-T1-E3 SI1070X-T1-E3 Vishay Semiconductor 类似代替
MOSFET N-CH 30V 1.2A SOT563F
PDF
SI1070X-T1-GE3 SI1070X-T1-GE3 Vishay Siliconix 类似代替 SC-89-6
MOSFET N-CH 30V 1.2A SOT563F
PDF

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