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Model SI2312BDS-T1-GE3
Description VISHAY SI2312BDS-T1-GE3 Transistor, MOSFET, N-channel, 3.9 A, 20 V, 0.025 ohm, 4.5 V, 850 mV
Product QR code
Brand: Vishay Semiconductor
Packaging SOT-23
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.78  yuan 0.78yuan
10+:
$ 1.0503
50+:
$ 0.9958
100+:
$ 0.9569
300+:
$ 0.9336
500+:
$ 0.9103
1000+:
$ 0.8869
2500+:
$ 0.8519
5000+:
$ 0.8441
Quantity
10+
50+
100+
300+
500+
Price
$1.0503
$0.9958
$0.9569
$0.9336
$0.9103
Price $ 1.0503 $ 0.9958 $ 0.9569 $ 0.9336 $ 0.9103
Start batch production 10+ 50+ 100+ 300+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4155) Minimum order quantity(10)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.025 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 750 mW

Technical parameters/threshold voltage: 850 mV

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/Continuous drain current (Ids): 5.00 A

Technical parameters/rise time: 30.0 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 750 mW

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: SOT-23

External dimensions/height: 1.02 mm

External dimensions/packaging: SOT-23

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standard/REACH SVHC version: 2015/06/15

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI2312BDS-T1-E3 SI2312BDS-T1-E3 Vishay Semiconductor 类似代替 SOT-23
TRANSISTOR 3900mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal
PDF
SI2312BDS-T1-E3 SI2312BDS-T1-E3 Vishay Intertechnology 类似代替 SOT-23-3
TRANSISTOR 3900mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal
SI2312BDS-T1-E3 SI2312BDS-T1-E3 Vishay Siliconix 类似代替 SOT-23-3
TRANSISTOR 3900mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal
PDF
SI2312BDS-T1-E3 SI2312BDS-T1-E3 VISHAY 类似代替 SOT-23-3
TRANSISTOR 3900mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal
PDF
SI2312DS-T1 SI2312DS-T1 Vishay Semiconductor 功能相似 SOT-23
N-Channel 20V (D-S) MOSFET
SI2312DS-T1 SI2312DS-T1 Vishay Siliconix 功能相似 SOT-23-3
N-Channel 20V (D-S) MOSFET
SI2312DS-T1-E3 SI2312DS-T1-E3 Vishay Semiconductor 功能相似 SOT-23
MOSFET 20V 3.77A
SI2312DS-T1-E3 SI2312DS-T1-E3 VISHAY 功能相似 SOT-23
MOSFET 20V 3.77A
PDF

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