Technical parameters/drain source resistance: 0.139 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 236 mW
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): -960 mA
Technical parameters/Input capacitance (Ciss): 315pF @15V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 236mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-89-6
External dimensions/packaging: SC-89-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/06/16
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1067X-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET 20V 1.06A 0.0236W 150mohms @ 4.5V
|
|||
SI1071X-T1-E3
|
Vishay Siliconix | 类似代替 | SC-89-6 |
MOSFET 30V 0.96A 0.236W 167mohms @ 10V
|
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